Product Datasheet Search Results:

IRF152.pdf4 Pages, 126 KB, Scan
IRF152
Fairchild Semiconductor
N-Channel Power MOSFETs, 40 A, 60 V/100 V
IRF152.pdf4 Pages, 200 KB, Original
IRF152.pdf4 Pages, 200 KB, Original
IRF152
Frederick Components
Power MOSFET Selection Guide
IRF152.pdf19 Pages, 625 KB, Original
IRF152
Motorola / Freescale Semiconductor
TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,1.5A I(D),TO-39
IRF152.pdf5 Pages, 192 KB, Scan
IRF152
General Electric Solid State
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 33A.
IRF152.pdf2 Pages, 124 KB, Scan
IRF152
General Electric
Power Transistor Data Book 1985
IRF152.pdf5 Pages, 199 KB, Scan
IRF152
Harris Semiconductor
Power MOSFET Data Book 1990
IRF152R.pdf5 Pages, 205 KB, Scan
IRF152R
Harris Semiconductor
Power MOSFET Data Book 1990
IRF152.pdf7 Pages, 58 KB, Original
IRF152
Intersil Corporation
33A and 40A, 60V and 100V, 0.055 and 0.08 ?, N-Channel Power MOSFETs
IRF152.pdf1 Pages, 36 KB, Original
IRF1520G.pdf6 Pages, 177 KB, Scan
IRF1520G
International Rectifier
7.2 A, 100 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET
IRF1520GPBF.pdf6 Pages, 177 KB, Scan
IRF1520GPBF
International Rectifier
7.2 A, 100 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET

Product Details Search Results:

Irf.com/IRF1520G
{"Terminal Finish":"TIN LEAD","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"36 mJ","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"7.2 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.2700 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"29 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR"...
1451 Bytes - 21:19:22, 11 December 2024
Irf.com/IRF1520GPBF
{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"36 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"7.2 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.2700 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"29 A","Channel Type":"N-CH...
1520 Bytes - 21:19:22, 11 December 2024
Various/IRF152R
{"C(iss) Max. (F)":"2.0n","Absolute Max. Power Diss. (W)":"150","g(fs) Max, (S) Trans. conduct,":"11","I(D) Abs. Max.(A) Drain Curr.":"20","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"125n","r(DS)on Max. (Ohms)":"80m","@V(DS) (V) (Test Condition)":"25","I(DM) Max (A)(@25°C)":"132","I(GSS) Max. (A)":"100n","g(fs) Min. (S) Trans. conduct.":"9.0","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"20","@Freq. (Hz) (Test Condition)":"1M","V(GS)th Max. (V)":"4","V(GS)th Min. (V)":"2","Packa...
1295 Bytes - 21:19:22, 11 December 2024

Documentation and Support

Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:

File NameFile Size (MB)DocumentMOQSupport
IRF1503S.pdf0.651Request
IRF1503.pdf0.541Request