2N6975, 2N6976, 2N6977, 2N6978 5A, 400V and 500V N-Channel IGBTs April 1995 Features Package JEDEC TO-204AA BOTTOM VIEW * 5A, 400V and 500V * VCE(ON) 2V COLLECTOR (FLANGE) EMITTER * TFI 1s, 0.5s * Low On-State Voltage GATE * Fast Switching Speeds * High Input Impedance Terminal Diagram Applications N-CHANNEL ENHANCEMENT MODE * Power Supplies C * Motor Drives * Protection Circuits G Description E The 2N6975, 2N6976, 2N6977 and the 2N6978 are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high-voltage, low on-dissipation applications such as switching regulators and motor drivers. These types can be operated directly from low-power integrated circuits. PACKAGING AVAILABILITY PART NUMBER PACKAGE 2N6975 TO-204AA 2N6976 TO-204AA 2N6977 TO-204AA 2N6978 TO-204AA BRAND NOTE: When ordering, use the entire part number. Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified. Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . .

2N6975, 2N6976, 2N6977, 2N6978 S E M I C O N D U C T O R 5A, 400V and 500V N-Channel IGBTs April 1995 Features Package JEDEC TO-204AA BOTTOM VIEW * 5A, 400V and 500V * VCE(ON) 2V COLLECTOR (FLANGE) EMITTER * TFI 1s, 0.5s * Low On-State Voltage GATE * Fast Switching Speeds * High Input Impedance Terminal Diagram Applications N-CHANNEL ENHANCEMENT MODE * Power Supplies C * Motor Drives * Protection Circuits G Description The 2N6975, 2N6976, 2N6977 and the 2N6978 are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high-voltage, low on-dissipation applications such as switching regulators and motor drivers. These types can be operated directly from low-power integrated circuits. E PACKAGING AVAILABILITY PART NUMBER PACKAGE 2N6975 TO-204AA 2N6976 TO-204AA 2N6977 TO-204AA 2N6978 TO-204AA BRAND NOTE: When ordering, use the entire part number. Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified. Collector-Emitter Voltage . . . . . .

2N6975, 2N6976, 2N6977, 2N6978 April 1995 5A, 400V and 500V N-Channel IGBTs Features Package + 5A, 400V and 500V JEDEC TO-204AA BOTTOM VIEW . VcE(ON) 2v EMITTER COLLECTOR Tr HS, 0.5us + Low On-State Voltage + Fast Switching Speeds High Input Impedance Applications + Power Supplies * Motor Drives Protection Circuits Description The 2N6975, 2N6976, 2N6977 and the 2N6978 are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high-voltage, low on-dissipation applications such as switching regulators and motor drivers. These types can be operated directly from low-power integrated circuits. (FLANGE) GATE Terminal Diagram N-CHANNEL ENHANCEMENT MODE c PACKAGING AVAILABILITY PART NUMBER PACKAGE BRAND 2N6975 TO-204AA 2N6976 TO-204AA 2N6977 TO-204AA 2N6978 TO-204AA NOTE: When ordering, use the entire part number. NOTE: 1. JEDEC registered value. Absolute Maximum Ratings Tx, = +25C, Unless Otherwise Specified. 2N6975/2N6977 2N6976/2N6978

2N6975, 2N6976 rewiconvveren 2N6977, 2N6978 December 1993 5A, 400V and 500V N-Channel IGBTs Features Package 5A, 400V and 500V JEDEC TO-204AA BOTTOM VIEW VcE(oN) 2v Tr Ips, 0.5ys e Low On-State Voltage Fast Switching Speeds EMITTER Y (RANGE) High Input Impedance GATE Applications Power Supplies * Motor Drives Terminal Diagram * Protection Circuits N-CHANNEL ENHANCEMENT MODE Description c The 2N6975, 2N6976, 2N6977 and the 2N6978 are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high-voltage, low on-dissipation applications such as a switching regulators and motor drivers. These types can be oper- ated directly from low-power integrated circuits. These types are supplied in the JEDEC TO-204AA steel package. IGBTs Absolute Maximum Ratings T, = +25C, Unless Otherwise Specified. 2N6975/2N6977 2N6976/2NG6978 (Note 1) (Note 1) UNITS Collactor-Emitter Voltage .. 6.0... ec eer e ene enee Voces 400 500 Vv Collector-Gate Voltage (Reg = 1 MQ) 0.

2N6975, 2N6976, 2N6977, 2N6978 Semiconductor 5A, 400V and 500V N-Channel IGBTs April 1995 Features Package JEDEC TO-204AA BOTTOM VIEW * 5A, 400V and 500V * VCE(ON) 2V COLLECTOR (FLANGE) EMITTER * TFI 1s, 0.5s * Low On-State Voltage GATE * Fast Switching Speeds * High Input Impedance Terminal Diagram Applications N-CHANNEL ENHANCEMENT MODE * Power Supplies C * Motor Drives * Protection Circuits G Description The 2N6975, 2N6976, 2N6977 and the 2N6978 are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high-voltage, low on-dissipation applications such as switching regulators and motor drivers. These types can be operated directly from low-power integrated circuits. E PACKAGING AVAILABILITY PART NUMBER PACKAGE 2N6975 TO-204AA 2N6976 TO-204AA 2N6977 TO-204AA 2N6978 TO-204AA BRAND NOTE: When ordering, use the entire part number. Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified. Collector-Emitter Voltage . . . . . . . . . . . .

2N6975, 2N6976, 2N6977, 2N6978 N-Channel Enhancement-Mode Conductivity-Modulated Power Field-Effect Transistors 5 A, 400 V and 500 V Veeton: 2 V Tr: 1 ws, 0.5 ps Features: = Low on-state voltage a Fast switching speeds a High input impedance Applications: a Power supplies a Motor drives wu Protection circuits The 2N6975, 2N6976, 2N6977 and the 2N6978 are n-channel enhancement-mode conductivity-modulated power field- effect transistors designed for high-voltage, low on-dissipation applications such as switching regulators and motor drivers. These types can be operated directly from low-power inte- grated circuits. These types are supplied in the JEDEC TO-204AA steel package. MAXIMUM RATINGS, Absolute-Maximum Values (Tc = 25C): COLLECTOR-EMITTER VOLTAGE, Vees ....... 0 ccc cece cece rece COLLECTOR-GATE VOLTAGE (Ree = 1 MO), Vean ....-2 eee eee eee REVERSE COLLECTOR-EMITTER VOLTAGE, Vcestrevi ...-- GATE-EMITTER VOLTAGE, Vor .....-.-.ec cece eee eee eeee wee COLLECTOR CURRENT, RMS Contin

ransistor Q1 can be used to provide an auxiliary timed delay function. 11-68 Application Note 6182 50K 5W RL 5 RP SET TEMP 3 12 6 2 MT2 14 100F 4 CA3059 13 NTC THERMISTOR 8 G MT1 7 120VAC 1 60Hz 9 10 11 1N914 68K 1/2 W 68K 1/2 W SET HYSTERESIS MAX CW TYPE 2N6975 MIN 1K, 1W DELAYED Q1 OUTPUT 560 1/2W 39K 1/2 W For applications that require complete elimination of half cycling without the addition of hysteresis, the circuit shown in Figure 13 may be employed. This circuit uses a CA3098E integrated circuit programmable comparator with a zerovoltage switch. A block diagram of CA3098E is shown in Figure 14. Because the CA3098E contains an integral flip-flop, its output will be in either a "0" or "1" state. Consequently the zero-voltage switch cannot operate in the linear mode, and spurious half cycling operation is prevented. When the signal input voltage at terminal 8 of the CA3098E is equal to or less than the "low" reference voltage (LR), current flows from the power supply through resistor R1 and

ransistor Q1 can be used to provide an auxiliary timed delay function. 11-68 Application Note 6182 50K 5W RL 5 RP SET TEMP 3 12 6 2 MT2 14 100F 4 CA3059 13 NTC THERMISTOR 8 G MT1 7 120VAC 1 60Hz 9 10 11 1N914 68K 1/2 W 68K 1/2 W SET HYSTERESIS MAX CW TYPE 2N6975 MIN 1K, 1W DELAYED Q1 OUTPUT 560 1/2W 39K 1/2 W For applications that require complete elimination of half cycling without the addition of hysteresis, the circuit shown in Figure 13 may be employed. This circuit uses a CA3098E integrated circuit programmable comparator with a zerovoltage switch. A block diagram of CA3098E is shown in Figure 14. Because the CA3098E contains an integral flip-flop, its output will be in either a "0" or "1" state. Consequently the zero-voltage switch cannot operate in the linear mode, and spurious half cycling operation is prevented. When the signal input voltage at terminal 8 of the CA3098E is equal to or less than the "low" reference voltage (LR), current flows from the power supply through resistor R1 and

o or exceeds the "high" reference voltage (HR), thereby effecting a change in the state of the flip-flop so that a logic "1" is 6 2 MT2 14 100F 4 CA3059 13 NTC THERMISTOR 8 G MT1 7 120VAC 1 60Hz 9 10 11 1N914 68K 1/2 W 68K 1/2 W SET HYSTERESIS MAX CW TYPE 2N6975 MIN 1K, 1W DELAYED Q1 OUTPUT 560 1/2W 39K 1/2 W + FIGURE 12. CA3059 ON/OFF CONTROLLER WITH CON- 10F 10K 6 5 8 1 10K CA3098 3 R2 7 4 5K 4W R1 47 LOAD 120V 60Hz 15K 2 100F - SENSOR 13 + MT2 5 2 3 62K 9 4 CA3059 11 0.001F MT1 G 10 8 7 10K FIGURE 13. SENSITIVE TEMPERATURE CONTROL 2 "HIGH" REFERENCE 7 (HR) 6 V+ OUTPUT CURRENT CONTROL 5 DIFF. AMPL. SIGNAL 8 INPUT "LOW" REFERENCE 1 (LR) PROGRAMMABLE BIAS CURRENT INPUT (IBIAS) FLIP-FLOP (MEMORY) SUMMER DRIVER OUTPUT DIFF. AMPL. CA3098E COMPARATOR SUBSTRATE 4 V- 7 "SINK" OUTPUT 3 Application Note 6182 applied to terminal 13 of the zero-voltage switch, and triggers the triac on. 15 CEXT = 10F 12 RESISTOR RS (k) "Proportional Control" Systems The on/off nature of the control shown in Figure 1 causes

2.0.0.0... 0. cece eee eee teeter nee 3-56 HGTG32N60E2 32A, BOOV N-Channel IGBT. 2... eee eee eee 3-60 3-1 IGBTsInsulated Gate Bipolar Transistors (IGBTS) _ (continuea) PAGE HGTG34N100E2 34A, 1000V N-Channel IGBT..............0 0000. c ee ee eee eee 3-64 2N6975, 2N6976, 5A, 400V and 500V N-Channel IGBTS... .....0 2.02... eee ee ee eee 3-69 2N6977, 2N6978 HGTB12N60D1C 12A, 600V Current Sensing N-Channel IGBT .........0. 0.00. cece eee eee 3-73 HGTP14N40F3VL 14A, 400V N-Channel, Voltage Clamping IGBT............- 20. cece ee eee eee ee 3-77 HGTP6N40E1D, 6A, 400V and 500V N-Channel IGBTs with Anti-Paraliel Ultrafast Diodes.......... 3-82 HGTP6N50E1D HGTP10N40C1D,E1D, 10A, 400V and S00V N-Channel IGBTs with Anti-Parallei Ultrafast Diodes......... 3-87 HGTP10N50C 1D, E1D HGTP10N40F1D, 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes......... 3-92 HGTP10N50F1D HGTH12N40C1D, E1D, =12A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes......... 3-97 HGTH12N50C 1D, E

Mot Si-P S P, 350/300V, 8A, SOW 17) T0-220 : MJE 5851 Mot Si-P =MJE 5850: 400/350V 17] 0-220 - MJE 5852 - Mot Si-P =MJE 5850: 450/400V 17 T0-220 : oo MJE 5974 Mot Si-P =2N5974: 15} =10-127 BD 244 17 BD 244A, BD 544A, BD 598, BD 798, ++ MJE 5975 Mot Si-P =2N6975: 15) =10-127 BD 244C 17) BD 2448, BD 544B, BD 600, BD 800, ++ MUJE 5976 Mot Si-P =2N5976: 15) ~T0-127 BD 244C 17) BD 244C, BD 544C, BD 602, BD 802, ++ MJE 5977 Mot Si-N =2N5977: 15) =10-127 BD 243 C 17j BD 243A, BD 543A, BD 597, BD 797, ++ MJE 5978 Mot Si-N =2N5Q78: 15) =10-127 BD 243 17 BD 2438, BD 543B, BD 599, BD 799, ++ MJE 5979 Mot _Si-N =2N5979: 15) =10-127 BD 243 C 17) BD 243, BD 543C,BD601,BD80t,++ MUJE 5980 Mat Si-P =2N5980: 415i =10-127 BD 810 17j BD 544A, BD 598, BD 798, BD 808, ++ MJE 5981 Mot Si-P =2N5981: 15) =T0-127 BD 810 17) BD 5448, BD 600, BD 800, BD 810, ++ MJE 5982 Mat Si-P =2N5982: 15) =10-127 BD 5446, BD 602, BD 802, ++ MUJE 5983 Mot Si-N =2N5983: 15) =10-127 BD 809 17j BD 543A, BD 597, BD 797, BD 807, ++ MUJE 5984