Product Datasheet Search Results:
- 2N720AJANTX
- New England Semiconductor
- NPN LOW POWER SILICON TRANSISTOR
Product Details Search Results:
Microsemi.com/2N720AJAN
{"Collector Current (DC) ":"0.5 A","Transistor Polarity":"NPN","Collector-Emitter Voltage":"80 V","Rad Hardened":"No","Mounting":"Through Hole","Emitter-Base Voltage":"7 V","Category ":"Bipolar Power","Operating Temperature Classification":"Military","Power Dissipation":"0.5 W","Operating Temp Range":"-65C to 200C","Package Type":"TO-18","Collector-Base Voltage":"120 V","DC Current Gain":"20","Pin Count":"3","Number of Elements":"1"}...
1404 Bytes - 08:30:27, 01 November 2024
Semicoa.com/2N720AJ
{"Status":"ACTIVE","Package Body Material":"METAL","Mfr Package Description":"HERMETIC SEALED, METAL CAN PACKAGE-3","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.5000 W","Package Style":"CYLINDRICAL","DC Current Gain-Min (hFE)":"40","Collector-emitter Voltage-Max":"80 V","Transistor Element Material":"SILICON","Collector Current-Max (IC)":"0.5000 A","Terminal Position":"BOTTOM","Transistor Polarity":"NPN","Package Shape":"ROUND","Configuration":"SINGLE","Transistor Type":"GENERAL PURPOSE SMALL S...
1229 Bytes - 08:30:27, 01 November 2024
Semicoa.com/2N720AJV
{"Status":"ACTIVE","Package Body Material":"METAL","Mfr Package Description":"HERMETIC SEALED, METAL CAN PACKAGE-3","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.5000 W","Package Style":"CYLINDRICAL","DC Current Gain-Min (hFE)":"40","Collector-emitter Voltage-Max":"80 V","Transistor Element Material":"SILICON","Collector Current-Max (IC)":"0.5000 A","Terminal Position":"BOTTOM","Transistor Polarity":"NPN","Package Shape":"ROUND","Configuration":"SINGLE","Transistor Type":"GENERAL PURPOSE SMALL S...
1236 Bytes - 08:30:27, 01 November 2024
Semicoa.com/2N720AJX
{"Status":"ACTIVE","Package Body Material":"METAL","Mfr Package Description":"HERMETIC SEALED, METAL CAN PACKAGE-3","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.5000 W","Package Style":"CYLINDRICAL","DC Current Gain-Min (hFE)":"40","Collector-emitter Voltage-Max":"80 V","Transistor Element Material":"SILICON","Collector Current-Max (IC)":"0.5000 A","Terminal Position":"BOTTOM","Transistor Polarity":"NPN","Package Shape":"ROUND","Configuration":"SINGLE","Transistor Type":"GENERAL PURPOSE SMALL S...
1236 Bytes - 08:30:27, 01 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
File Name | File Size (MB) | Document | MOQ | Support |
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2N7002DW.pdf | 0.19 | 1 | Request | |
2N7002.pdf | 0.22 | 1 | Request | |
VV5QC21-02N7TD0.pdf | 14.64 | 1 | Request | |
VV5QC21-02N7FD1-S.pdf | 14.64 | 1 | Request | |
VV5QC21-12N7SD0-D0R.pdf | 14.64 | 1 | Request | |
VV5QC21-02N7FD2.pdf | 14.64 | 1 | Request | |
VV5QZ35-02N7TC-D.pdf | 8.56 | 1 | Request | |
VV5QC21-12N7FD0-S.pdf | 14.64 | 1 | Request | |
VV5Q11-02N7FS0-DS.pdf | 12.21 | 1 | Request | |
VV5Q21-02N7FS0-S.pdf | 12.21 | 1 | Request | |
VV5QC21-12N7FD3-S.pdf | 14.64 | 1 | Request | |
VV5Q11-02N7FU0-D.pdf | 12.21 | 1 | Request |