Datasheet.Directory

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Online Catalog":"N-Channel Logic Level Gate FETs","Product Photos":"TO-92-3(StandardBody),TO-226_straightlead","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2V @ 500\u00b5A","Series":"-","Package \/ Case":"TO-226-3, TO-92-3 (TO-226AA)","Supplier Device Package":"TO-92-3","Datasheets":"TN0110","Rds On (Max) @ Id, Vgs":"3 Ohm @ 500mA, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Bulk","Power - Max":"1W","Standard ...

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Product Photos":"TO-92-3(StandardBody),TO-226_straightlead","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2V @ 500\u00b5A","Series":"-","Package \/ Case":"TO-226-3, TO-92-3 (TO-226AA)","Supplier Device Package":"TO-92-3","Datasheets":"TN0110","Rds On (Max) @ Id, Vgs":"3 Ohm @ 500mA, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"1W","Standard Package":"2,000","PCN Assembly\/Origin"...

{"Factory Pack Quantity":"2000","Vds - Drain-Source Breakdown Voltage":"100 V","Transistor Polarity":"N-Channel","Minimum Operating Temperature":"- 55 C","Channel Mode":"Enhancement","Vgs - Gate-Source Breakdown Voltage":"20 V","Brand":"Microchip Technology","Id - Continuous Drain Current":"350 mA","Mounting Style":"Through Hole","Pd - Power Dissipation":"1 W","Packaging":"Reel","Rise Time":"3 ns","Product Category":"MOSFET","Rds On - Drain-Source Resistance":"4.5 Ohms","Package \/ Case":"TO-92-3","Typical ...

{"Factory Pack Quantity":"2000","Vds - Drain-Source Breakdown Voltage":"100 V","Transistor Polarity":"N-Channel","Channel Mode":"Enhancement","Brand":"Microchip Technology","Id - Continuous Drain Current":"350 mA","Mounting Style":"Through Hole","Packaging":"Reel","Product Category":"MOSFET","Rds On - Drain-Source Resistance":"4.5 Ohms","Package \/ Case":"TO-92-3","RoHS":"Details","Manufacturer":"Microchip"}...

{"Factory Pack Quantity":"2000","Vds - Drain-Source Breakdown Voltage":"100 V","Transistor Polarity":"N-Channel","Minimum Operating Temperature":"- 55 C","Channel Mode":"Enhancement","Vgs - Gate-Source Breakdown Voltage":"20 V","Brand":"Microchip Technology","Id - Continuous Drain Current":"350 mA","Mounting Style":"Through Hole","Pd - Power Dissipation":"1 W","Packaging":"Reel","Rise Time":"3 ns","Product Category":"MOSFET","Rds On - Drain-Source Resistance":"4.5 Ohms","Package \/ Case":"TO-92-3","Typical ...

{"Factory Pack Quantity":"2000","Vds - Drain-Source Breakdown Voltage":"100 V","Transistor Polarity":"N-Channel","Minimum Operating Temperature":"- 55 C","Channel Mode":"Enhancement","Vgs - Gate-Source Breakdown Voltage":"20 V","Brand":"Microchip Technology","Id - Continuous Drain Current":"350 mA","Mounting Style":"Through Hole","Pd - Power Dissipation":"1 W","Packaging":"Reel","Rise Time":"3 ns","Product Category":"MOSFET","Rds On - Drain-Source Resistance":"4.5 Ohms","Package \/ Case":"TO-92-3","Typical ...

{"Terminal Finish":"MATTE TIN","Terminal Form":"THROUGH-HOLE","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.3500 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"3 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"100 V","Tran...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"0.35(A)","Mounting":"Through Hole","Drain-Source On-Volt":"100(V)","Pin Count":"3","Packaging":"Bag","Power Dissipation":"1(W)","Operating Temp Range":"-55C to 150C","Package Type":"TO-92","Rad Hardened":"No","Type":"Power MOSFET","Drain-Source On-Res":"3(ohm)","Number of Elements":"1"}...